IQDH35N03LM5SCATMA1 vs IQE020N04LM6CGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQDH35N03LM5SCATMA1 dari Infineon dan IQE020N04LM6CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQDH35N03LM5SCATMA1 IQE020N04LM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 6 trench
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Paket PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +175 C -55 °C to +150 °C (junction, per Infineon MOSFET convention)
Level MSL 1 (unlimited) 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs)
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Part Family — OptiMOS 6 low-voltage power MOSFET
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current at TA=25°C — 25 A
Continuous Drain Current at TC=25°C — 166 A
Maximum RDS(on) — 2.0 mΩ (per IQE part-number decode)
Power Dissipation at TA=25°C — 2.5 W
Power Dissipation at TC=25°C — 107 W
Jumlah Pin — 9
Lead-Free — Yes

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IQE020N04LM6CGSCATMA1

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