IQDH35N03LM5SCATMA1 vs IQE020N04LM6CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH35N03LM5SCATMA1 disebabkan oleh Infineon dan IQE020N04LM6CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQDH35N03LM5SCATMA1 IQE020N04LM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 6 trench
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Kemasan PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C -55 °C to +150 °C (junction, per Infineon MOSFET convention)
Aras MSL 1 (unlimited) 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs)
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Part Family — OptiMOS 6 low-voltage power MOSFET
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current at TA=25°C — 25 A
Continuous Drain Current at TC=25°C — 166 A
Maximum RDS(on) — 2.0 mΩ (per IQE part-number decode)
Power Dissipation at TA=25°C — 2.5 W
Power Dissipation at TC=25°C — 107 W
Kiraan Pin — 9
Lead-Free — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga