IQE013N04LM6ATMA1 vs IQE220N15NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IQE013N04LM6ATMA1 dari Infineon dan IQE220N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE220N15NM5ATMA1 IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE013N04LM6ATMA1 IQE220N15NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS N-channel trench MOSFET Trench MOSFET (OptiMOS 5)
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) 4.6 V (typ at 46 µA)
Paket PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-TSON-8-5 (Source-Down)
Rentang Suhu Kerja -55 °C to +175 °C —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 Power-Transistor
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at Ta — 7 A
Continuous Drain Current (ID) at Tc — 44 A
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 100 W
RDS(on) Max at VGS=10V — 22 mΩ
Total Gate Charge (Qg) — 14.4 nC at 10 V
Input Capacitance (Ciss) — 14 pF
Output Capacitance (Coss) — 340 pF
Konfigurasi Output — Single N-Channel
Suhu Kerja — -55C to +150C (junction)
Level MSL — 1

Spek dan Sumber

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