IQE013N04LM6ATMA1 vs IQEH68NE2LM7UCGATMA1 Perbandingan

Perbandingan bersamaan detil IQE013N04LM6ATMA1 dari Infineon dan IQEH68NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH68NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE013N04LM6ATMA1 IQEH68NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS N-channel trench MOSFET OptiMOS 7 trench MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 25 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 107 W —
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) —
Paket PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-TTFN-9-3 (surface mount)
Rentang Suhu Kerja -55 °C to +175 °C -55 °C to +175 °C (typical for OptiMOS 7)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (per distributor listing)
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) @ Ta — 47 A
Pulsed Drain Current (IDM) @ Tc — 338 A
Power Dissipation (PD) @ Ta — 2.5 W
Power Dissipation (PD) @ Tc — 130 W
Gate Threshold Voltage Type — Logic-level (per OptiMOS 7 family)
On-Resistance Family — RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Maximum Junction Temperature — 175 °C
Level MSL — [DATA_NEEDED: MSL Level]
Packaging — Tape & Reel (per ATMA1 suffix)

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