IQE036N08NM6ATMA1 vs ISC015N06NM5ATMA1 Perbandingan
Perbandingan bersamaan detil IQE036N08NM6ATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQE036N08NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at Ta | 16.7 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| On-Resistance RDS(on) typical | 3.6 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 125 W | — |
| Paket | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55°C to +150°C (junction, per datasheet) | -55 C to +175 C |
| Status RoHS | Compliant | Compliant |
| Level MSL | MSL1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |