IQE050N08NM5CGATMA1 vs IQDH88N06LM5CGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQE050N08NM5CGATMA1 dari Infineon dan IQDH88N06LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE050N08NM5CGATMA1 IQDH88N06LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Paket PG-TTFN-9-1 (Surface Mount) PG-WHTFN-9-U02 (PQFN 5x6)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) OptiMOS 5 (trench)
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Suhu Kerja -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (Ta=25°C) — 42 A
Arus Alir Berlanjut (TC=25°C) — 447 A
On-Resistance RDS(on) typical @ VGS=10V — 0.86 mΩ
Power Dissipation (Ta=25°C) — 3 W
Dissipasi Listrik (TC=25°C) — 333 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical — [DATA_NEEDED: Qg typical nC]
Rentang Suhu Kerja — -55°C to +175°C (TJ)
Jumlah Pin — 9 (with exposed pad)
Cooling — Dual-side cooling capable
Polarity — N-Channel
Configuration — Single

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IQDH88N06LM5CGSCATMA1

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