IQE050N08NM5CGATMA1 vs IQDH88N06LM5CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGATMA1 disebabkan oleh Infineon dan IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE050N08NM5CGATMA1 IQDH88N06LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Kemasan PG-TTFN-9-1 (Surface Mount) PG-WHTFN-9-U02 (PQFN 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) OptiMOS 5 (trench)
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Suhu Operasi -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (Ta=25°C) — 42 A
Arus Kumpal Tetap (TC=25°C) — 447 A
On-Resistance RDS(on) typical @ VGS=10V — 0.86 mΩ
Power Dissipation (Ta=25°C) — 3 W
Pembuangan Kuasa (TC=25°C) — 333 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical — [DATA_NEEDED: Qg typical nC]
Gambaran Suhu Operasi — -55°C to +175°C (TJ)
Kiraan Pin — 9 (with exposed pad)
Cooling — Dual-side cooling capable
Polarity — N-Channel
Configuration — Single

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