IQE065N10NM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQE065N10NM5CGSCATMA1 dari Infineon dan IQDH88N06LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQE065N10NM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Paket | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5 (trench) |
| Rentang Suhu Kerja | -55 C to +150 C | -55°C to +175°C (TJ) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Arus Alir Berlanjut (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Dissipasi Listrik (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Jumlah Pin | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Configuration | — | Single |