IQE220N15NM5CGATMA1 vs IQE036N08NM6CGATMA1 Perbandingan

Perbandingan bersamaan detil IQE220N15NM5CGATMA1 dari Infineon dan IQE036N08NM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE036N08NM6CGATMA1 IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE220N15NM5CGATMA1 IQE036N08NM6CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc 44 A —
Continuous Drain Current (ID) at Ta [DATA_NEEDED: ID at Ta] —
On-State Resistance RDS(on) max 22 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Paket PG-TTFN-9-3 (Source-Down) PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (estimated from Tj max) -55 C to +175 C (junction, Tj)
Technology Trench MOSFET, OptiMOS 5 Trench MOSFET, OptiMOS 6
Level MSL 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Jumlah Pin 9 (TTFN) —
Product Family — OptiMOS 6
Drain-Source Voltage (Vds) — 80 V
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Continuous Drain Current (Id) at Tc — 118 A
Continuous Drain Current (Id) at Ta — 16.7 A
Rds(on) max at Vgs=10V — 3.6 mOhm
Gate Threshold Voltage (Vgs(th)) — 3.5 V (max)
Power Dissipation at Tc — 125 W
Power Dissipation at Ta — 2.5 W
Configuration — Single N-channel, Source-Down

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