IQE220N15NM5CGATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5CGATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5CGATMA1
IQE220N15NM5CGATMA1 - 150V 44A N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5CGATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at Tc | 44 A | β |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at Ta] | β |
| On-State Resistance RDS(on) max | 22 mOhm | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 100 W | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Package | PG-TTFN-9-3 (Source-Down) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (estimated from Tj max) | -55 C to +175 C (junction, Tj) |
| Technology | Trench MOSFET, OptiMOS 5 | Trench MOSFET, OptiMOS 6 |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Pin Count | 9 (TTFN) | β |
| Product Family | β | OptiMOS 6 |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| Configuration | β | Single N-channel, Source-Down |