IQEH46NE2LM7UCGSCATMA1 vs IQEH54NE2LM7UCGATMA1 Perbandingan

Perbandingan bersamaan detil IQEH46NE2LM7UCGSCATMA1 dari Infineon dan IQEH54NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH46NE2LM7UCGSCATMA1 IQEH54NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS 7 (trench) —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TC 440 A —
Continuous Drain Current (ID) at TA 57 A —
Power Dissipation at TA 2.5 W —
Power Dissipation at TC 150 W —
Maximum On-Resistance (RDS(on)) 0.46 mOhm —
Gate Threshold Voltage (VGS(th)) 2 V [DATA_NEEDED: VGS(th) typical/min/max]
Paket PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) PG-TTFN-9-3
Tipe Mounting Surface Mount Surface Mount
Polarity / Channel Type Single N-Channel —
Operating Mode Enhancement-mode —
Topology Suitability Hard- and soft-switching —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Channel Type — N-Channel
Continuous Drain Current (ID) at Ta — 52 A
Continuous Drain Current (ID) at Tc — 406 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 150 W
On-Resistance (RDS(on)) at 10V VGS — [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical in nC]
Rentang Suhu Kerja — -55C to +150C (typical MOSFET range)
Level MSL — [DATA_NEEDED: MSL rating]

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IQEH46NE2LM7UCGSCATMA1

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