IQEH46NE2LM7UCGSCATMA1 vs IQEH54NE2LM7UCGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH46NE2LM7UCGSCATMA1 disebabkan oleh Infineon dan IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH46NE2LM7UCGSCATMA1 IQEH54NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 7 (trench) —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TC 440 A —
Continuous Drain Current (ID) at TA 57 A —
Power Dissipation at TA 2.5 W —
Power Dissipation at TC 150 W —
Maximum On-Resistance (RDS(on)) 0.46 mOhm —
Gate Threshold Voltage (VGS(th)) 2 V [DATA_NEEDED: VGS(th) typical/min/max]
Kemasan PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) PG-TTFN-9-3
Jenis Pemasangan Surface Mount Surface Mount
Polarity / Channel Type Single N-Channel —
Operating Mode Enhancement-mode —
Topology Suitability Hard- and soft-switching —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Channel Type — N-Channel
Continuous Drain Current (ID) at Ta — 52 A
Continuous Drain Current (ID) at Tc — 406 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 150 W
On-Resistance (RDS(on)) at 10V VGS — [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical in nC]
Gambaran Suhu Operasi — -55C to +150C (typical MOSFET range)
Aras MSL — [DATA_NEEDED: MSL rating]

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