IQEH50NE2LM7UCGSCATMA1 vs IQDH29NE2LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQEH50NE2LM7UCGSCATMA1 dari Infineon dan IQDH29NE2LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQEH50NE2LM7UCGSCATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at TA | 54 A | — |
| Continuous Drain Current (ID) at TC | 422 A | — |
| RDS(on) Max | 0.5 mΩ | — |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 150 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Paket | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9-U02 (WHTFN EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | — |
| Technology | Silicon N-Channel Power MOSFET | OptiMOS 5 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Jumlah Pin | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Status RoHS | — | Compliant |