IQEH50NE2LM7UCGSCATMA1 vs IQE020N04LM6CGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7UCGSCATMA1 dari Infineon dan IQE020N04LM6CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7UCGSCATMA1 IQE020N04LM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at TA 54 A —
Continuous Drain Current (ID) at TC 422 A —
RDS(on) Max 0.5 mΩ —
Gate Threshold Voltage (VGS(th)) typ 2 V —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 150 W —
Maximum Junction Temperature 175 °C —
Paket PG-WHTFN-9-1 (surface mount) PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled)
Tipe Mounting Surface Mount Surface Mount
Series OptiMOS 7 —
Technology Silicon N-Channel Power MOSFET OptiMOS 6 trench
Part Family — OptiMOS 6 low-voltage power MOSFET
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current at TA=25°C — 25 A
Continuous Drain Current at TC=25°C — 166 A
Maximum RDS(on) — 2.0 mΩ (per IQE part-number decode)
Power Dissipation at TA=25°C — 2.5 W
Power Dissipation at TC=25°C — 107 W
Jumlah Pin — 9
Rentang Suhu Kerja — -55 °C to +150 °C (junction, per Infineon MOSFET convention)
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs)

Spek dan Sumber

IQEH50NE2LM7UCGSCATMA1

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IQE020N04LM6CGSCATMA1

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