IQEH50NE2LM7ZCGATMA1 vs IQE031N08LM6CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQEH50NE2LM7ZCGATMA1 dari Infineon dan IQE031N08LM6CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ AktifInfineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQEH50NE2LM7ZCGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Rentang Suhu Kerja | -55 degrees C to +175 degrees C | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Paket | PG-TTFN-9-3 | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | — |
| Status RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Level MSL | — | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Lead-Free | — | Yes |