IQEH50NE2LM7ZCGATMA1 vs IQE031N08LM6CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQEH50NE2LM7ZCGATMA1 sa pamamagitan ng Infineon at IQE031N08LM6CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ NakahandaInfineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQEH50NE2LM7ZCGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Hanay ng Temperature na Operasyon | -55 degrees C to +175 degrees C | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Packhaging | PG-TTFN-9-3 | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | — |
| Tindminan RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Level ng MSL | — | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Lead-Free | — | Yes |