IQEH54NE2LM7UCGATMA1 vs IAUCN04S7N019GATMA1 Perbandingan

Perbandingan bersamaan detil IQEH54NE2LM7UCGATMA1 dari Infineon dan IAUCN04S7N019GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQEH54NE2LM7UCGATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 7
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Paket PG-TTFN-9-3 PG-THSOG-4-1 (SSO4G 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Rentang Suhu Kerja -55C to +150C (typical MOSFET range) [DATA_NEEDED: junction temperature range from datasheet]
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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