IQEH54NE2LM7UCGATMA1 vs IAUCN04S7N019GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon dan IAUCN04S7N019GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQEH54NE2LM7UCGATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 7
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Kemasan PG-TTFN-9-3 PG-THSOG-4-1 (SSO4G 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Gambaran Suhu Operasi -55C to +150C (typical MOSFET range) [DATA_NEEDED: junction temperature range from datasheet]
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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