IQEH84NE2LM7UCGATMA1 vs IQDH88N06LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQEH84NE2LM7UCGATMA1 dari Infineon dan IQDH88N06LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQEH84NE2LM7UCGATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (Trench MOSFET) | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 107 W | — |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TTFN-9-3 (surface mount, source-down) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | [DATA_NEEDED: pin count from datasheet pinout] | 9 (with exposed pad) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Switching Application | Hard- and soft-switching | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Arus Alir Berlanjut (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Dissipasi Listrik (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Rentang Suhu Kerja | — | -55°C to +175°C (TJ) |
| Cooling | — | Dual-side cooling capable |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Configuration | — | Single |