IQEH84NE2LM7UCGATMA1 vs IQDH88N06LM5CGSCATMA1 比較

詳細並排比較 IQEH84NE2LM7UCGATMA1 由 Infineon 與 IQDH88N06LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IQEH84NE2LM7UCGATMA1 IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 ✓ 啟用中
Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ 啟用中

規格比較

參數 IQEH84NE2LM7UCGATMA1 IQDH88N06LM5CGSCATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS 7 (Trench MOSFET) OptiMOS 5 (trench)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at Ta 42 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 107 W —
RDS(on) @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
工作接面溫度 -55 C to +175 C —
封裝 PG-TTFN-9-3 (surface mount, source-down) PG-WHTFN-9-U02 (PQFN 5x6)
安裝類型 Surface Mount Surface Mount
腳位數 [DATA_NEEDED: pin count from datasheet pinout] 9 (with exposed pad)
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Switching Application Hard- and soft-switching —
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (Ta=25°C) — 42 A
連續汲極電流 (TC=25°C) — 447 A
On-Resistance RDS(on) typical @ VGS=10V — 0.86 mΩ
Power Dissipation (Ta=25°C) — 3 W
功率耗散 (TC=25°C) — 333 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical — [DATA_NEEDED: Qg typical nC]
工作溫度範圍 — -55°C to +175°C (TJ)
Cooling — Dual-side cooling capable
MSL 等級 — 1 (per JEDEC J-STD-020)
Polarity — N-Channel
Configuration — Single

資料表與資源

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