IQFH55N04NM6ATMA1 vs IQEH50NE2LM7ZCGATMA1 Perbandingan

Perbandingan bersamaan detil IQFH55N04NM6ATMA1 dari Infineon dan IQEH50NE2LM7ZCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQFH55N04NM6ATMA1 IQEH50NE2LM7ZCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) @ TA=25°C 53 A —
Pulsed Drain Current @ TC=25°C 451 A —
Static R_DS(on) (typ) 0.55 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 214 W —
Paket PG-TSON-12-1 (PQFN 8x6 mm², clip-based) PG-TTFN-9-3
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Suhu Hubung Kerja -55°C to +175°C —
Technology Trench MOSFET (OptiMOS 6 generation) OptiMOS 7 (Trench-Gate)
Status RoHS Compliant Compliant
AEC-Q100 [DATA_NEEDED: automotive qualification status] —
Product Family — OptiMOS 7 Power-Transistor
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 150 W
Maximum Junction Temperature — +175 degrees C
Rentang Suhu Kerja — -55 degrees C to +175 degrees C
Qualification — Industrial grade per Infineon datasheet

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