IQFH55N04NM6ATMA1 vs IQEH50NE2LM7ZCGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQFH55N04NM6ATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQFH55N04NM6ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) @ TA=25°C | 53 A | — |
| Pulsed Drain Current @ TC=25°C | 451 A | — |
| Static R_DS(on) (typ) | 0.55 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 214 W | — |
| Kemasan | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) | PG-TTFN-9-3 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Technology | Trench MOSFET (OptiMOS 6 generation) | OptiMOS 7 (Trench-Gate) |
| Status RoHS | Compliant | Compliant |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Gambaran Suhu Operasi | — | -55 degrees C to +175 degrees C |
| Qualification | — | Industrial grade per Infineon datasheet |