IR2101PBF vs IR2110SPBF Perbandingan

Perbandingan bersamaan detil IR2101PBF dari Infineon dan IR2110SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2101PBF IR2110SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge (High and Low Side) —
Input Type Non-Inverting —
Number of Drivers 2 (High-Side + Low-Side) —
Jumlah Output 2 —
Supply Voltage (VCC/VBS) 10 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Peak Source Current 0.21 A (210 mA) —
Peak Sink Current 0.36 A —
Offset (High-Side) Voltage Up to +600 V —
Propagation Delay 160 ns —
Undervoltage Lockout Yes —
dV/dt Immunity Yes (negative transient tolerant) —
Suhu Kerja -40C to +125C —
Paket 8-PDIP (0.300 inch, 7.62 mm) 16-pin SOIC (SO-16, DW suffix)
Tipe Mounting Through-Hole Surface Mount
Packaging Tube —
Status RoHS Compliant (Pb-free PBF suffix) —
Fungsi — Half-bridge gate driver
Topologi — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Rentang Suhu Kerja — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

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