IR2101PBF vs IR2110SPBF 比較

詳細並排比較 IR2101PBF 由 Infineon 與 IR2110SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2101PBF IR2110SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-Bridge (High and Low Side) —
Input Type Non-Inverting —
Number of Drivers 2 (High-Side + Low-Side) —
輸出數量 2 —
Supply Voltage (VCC/VBS) 10 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Peak Source Current 0.21 A (210 mA) —
Peak Sink Current 0.36 A —
Offset (High-Side) Voltage Up to +600 V —
Propagation Delay 160 ns —
Undervoltage Lockout Yes —
dV/dt Immunity Yes (negative transient tolerant) —
工作溫度 -40C to +125C —
封裝 8-PDIP (0.300 inch, 7.62 mm) 16-pin SOIC (SO-16, DW suffix)
安裝類型 Through-Hole Surface Mount
Packaging Tube —
RoHS 狀態 Compliant (Pb-free PBF suffix) —
功能 — Half-bridge gate driver
拓撲 — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
工作溫度範圍 — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

資料表與資源

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