IR2101PBF vs IR2110SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2101PBF disebabkan oleh Infineon dan IR2110SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2101PBF IR2110SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge (High and Low Side) —
Input Type Non-Inverting —
Number of Drivers 2 (High-Side + Low-Side) —
Bilangan Output 2 —
Supply Voltage (VCC/VBS) 10 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Peak Source Current 0.21 A (210 mA) —
Peak Sink Current 0.36 A —
Offset (High-Side) Voltage Up to +600 V —
Propagation Delay 160 ns —
Undervoltage Lockout Yes —
dV/dt Immunity Yes (negative transient tolerant) —
Suhu Operasi -40C to +125C —
Kemasan 8-PDIP (0.300 inch, 7.62 mm) 16-pin SOIC (SO-16, DW suffix)
Jenis Pemasangan Through-Hole Surface Mount
Packaging Tube —
Status RoHS Compliant (Pb-free PBF suffix) —
Fungsi — Half-bridge gate driver
Tetstruktur — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Gambaran Suhu Operasi — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

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