IR2109STRPBF vs IR2109SPBF Perbandingan

Perbandingan bersamaan detil IR2109STRPBF dari Infineon dan IR2109SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2109STRPBF IR2109SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration Half-Bridge (High-Side + Low-Side) —
Jumlah Output 2 (High-Side / Low-Side) —
High-Side Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Peak Source Output Current 0.2 A (typ) —
Peak Sink Output Current 0.35 A (typ) —
Propagation Delay (typ) 750 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
ton / toff (typ) 540 ns —
Input Logic Non-Inverting —
UVLO Yes (VCC and VBS) —
Bootstrap Diode Integrated Integrated
Dead Time Control Built-in —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Paket 8-SOIC (3.90 mm Width) SOIC-8
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40 C to +125 C —
Status RoHS Compliant Compliant
Driver Configuration — Half-Bridge
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Waktu naik — 200 ns
Waktu Menurun — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout — Yes (VCC)
Suhu Hubung Kerja — -40 C to +150 C

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