IR2109STRPBF vs IR2109SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2109STRPBF disebabkan oleh Infineon dan IR2109SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2109STRPBF IR2109SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration Half-Bridge (High-Side + Low-Side) —
Bilangan Output 2 (High-Side / Low-Side) —
High-Side Offset Voltage (Max) 600 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Peak Source Output Current 0.2 A (typ) —
Peak Sink Output Current 0.35 A (typ) —
Propagation Delay (typ) 750 ns —
Rise/Fall Time (typ) [DATA_NEEDED: rise/fall time] —
ton / toff (typ) 540 ns —
Input Logic Non-Inverting —
UVLO Yes (VCC and VBS) —
Bootstrap Diode Integrated Integrated
Dead Time Control Built-in —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Kemasan 8-SOIC (3.90 mm Width) SOIC-8
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40 C to +125 C —
Status RoHS Compliant Compliant
Driver Configuration — Half-Bridge
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Masa Pertambahan — 200 ns
Masa jatuh — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout — Yes (VCC)
Suhu Hubungan Operasi — -40 C to +150 C

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