IR2110SPBF vs 2ED2738S01GXTMA1 Perbandingan

Perbandingan bersamaan detil IR2110SPBF dari Infineon dan 2ED2738S01GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2110SPBF 2ED2738S01GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-bridge gate driver —
Topologi High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Diode Integrated Integrated
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
Rentang Suhu Kerja -40 C to +125 C —
Paket 16-pin SOIC (SO-16, DW suffix) PG-VSON-10-5 (3x3 mm) with EP
Tipe Mounting Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Output Current (Source, peak) — 4.0 A
Output Current (Sink, peak) — 8.0 A
Output Current (Source, typ) — 1.0 A
Output Current (Sink, typ) — 2.0 A
Jumlah Output — 1
Input Type — Non-Inverting
Input Logic Compatibility — TTL
Supply Voltage (VDD/VCC) — 6 V to 20 V
Bootstrap Supply Voltage — Up to 600 V (HS pin rating)
Propagation Delay (typ) — 120 ns
Channel-to-Channel Match — 40 ns
Rise/Fall Time (1 nF load) — 1.5 ns / 1.5 ns
Negative Transient Immunity (HS) — -10 V to +20 V transient
Under-Voltage Lockout — VCC and Bootstrap
Suhu Kerja — -40C to +125C
Level MSL — 2 (1 year)
Status RoHS — Compliant

Spek dan Sumber

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