IR2110SPBF vs 2ED2738S01GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2110SPBF disebabkan oleh Infineon dan 2ED2738S01GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2110SPBF 2ED2738S01GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-bridge gate driver —
Tetstruktur High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Diode Integrated Integrated
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
Gambaran Suhu Operasi -40 C to +125 C —
Kemasan 16-pin SOIC (SO-16, DW suffix) PG-VSON-10-5 (3x3 mm) with EP
Jenis Pemasangan Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Output Current (Source, peak) — 4.0 A
Output Current (Sink, peak) — 8.0 A
Output Current (Source, typ) — 1.0 A
Output Current (Sink, typ) — 2.0 A
Bilangan Output — 1
Input Type — Non-Inverting
Input Logic Compatibility — TTL
Supply Voltage (VDD/VCC) — 6 V to 20 V
Bootstrap Supply Voltage — Up to 600 V (HS pin rating)
Propagation Delay (typ) — 120 ns
Channel-to-Channel Match — 40 ns
Rise/Fall Time (1 nF load) — 1.5 ns / 1.5 ns
Negative Transient Immunity (HS) — -10 V to +20 V transient
Under-Voltage Lockout — VCC and Bootstrap
Suhu Operasi — -40C to +125C
Aras MSL — 2 (1 year)
Status RoHS — Compliant

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