IR2110SPBF vs IR2101PBF Perbandingan

Perbandingan bersamaan detil IR2110SPBF dari Infineon dan IR2101PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2110SPBF IR2101PBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-bridge gate driver —
Topologi High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V, 5 V, 15 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
Rentang Suhu Kerja -40 C to +125 C —
Paket 16-pin SOIC (SO-16, DW suffix) 8-PDIP (0.300 inch, 7.62 mm)
Tipe Mounting Surface Mount Through-Hole
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — Half-Bridge (High and Low Side)
Input Type — Non-Inverting
Number of Drivers — 2 (High-Side + Low-Side)
Jumlah Output — 2
Supply Voltage (VCC/VBS) — 10 V to 20 V
Peak Source Current — 0.21 A (210 mA)
Peak Sink Current — 0.36 A
Offset (High-Side) Voltage — Up to +600 V
Propagation Delay — 160 ns
Undervoltage Lockout — Yes
dV/dt Immunity — Yes (negative transient tolerant)
Suhu Kerja — -40C to +125C
Packaging — Tube
Status RoHS — Compliant (Pb-free PBF suffix)

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