IR2110SPBF vs IR2101PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2110SPBF sa pamamagitan ng Infineon at IR2101PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2110SPBF IR2101PBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi Half-bridge gate driver —
Topolohiya High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V, 5 V, 15 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
Hanay ng Temperature na Operasyon -40 C to +125 C —
Packhaging 16-pin SOIC (SO-16, DW suffix) 8-PDIP (0.300 inch, 7.62 mm)
Uri ng Pagpapasok Surface Mount Through-Hole
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — Half-Bridge (High and Low Side)
Input Type — Non-Inverting
Number of Drivers — 2 (High-Side + Low-Side)
Bilang ng Outputs — 2
Supply Voltage (VCC/VBS) — 10 V to 20 V
Peak Source Current — 0.21 A (210 mA)
Peak Sink Current — 0.36 A
Offset (High-Side) Voltage — Up to +600 V
Propagation Delay — 160 ns
Undervoltage Lockout — Yes
dV/dt Immunity — Yes (negative transient tolerant)
Temperature na Operasyon — -40C to +125C
Packaging — Tube
Tindminan RoHS — Compliant (Pb-free PBF suffix)

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