IR2114SSTRPBF vs IRS2011STRPBF Perbandingan

Perbandingan bersamaan detil IR2114SSTRPBF dari Infineon dan IRS2011STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2114SSTRPBF IRS2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge High-Side and Low-Side, Independent Channels
Driver Type High-side and Low-side Gate Driver —
Number of Drivers 2 —
Input Type Non-Inverting —
Supply Voltage (VCC) 11.5 V to 20 V 10 V to 20 V
Floating Channel Voltage 600 V (max) —
Peak Source Current 2 A (typical) —
Peak Sink Current 3 A (typical) —
Propagation Delay 440 ns (typical) —
Rise Time (typ) [DATA_NEEDED: rise time] —
Fall Time (typ) [DATA_NEEDED: fall time] —
Suhu Kerja -40 C to +125 C -40 C to +125 C
Paket / Case 24-SSOP (0.209, 5.30 mm Width) —
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant (PBF suffix)
Lead-Free Yes (PBF suffix indicates Pb-free) —
Protection Features DESAT short-circuit detection, soft over-current shutdown —
FAULT/SD Logic 3.3 V-compatible CMOS, bidirectional —
Fungsi — Half-Bridge Gate Driver
Jumlah Output — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Bootstrap Supply — Integrated bootstrap diode, floating channel
Negative Transient Tolerance — Yes, dV/dt immune
Paket — 8-SOIC (DSO-8)
Suitable Drivers — MOSFETs and IGBTs

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