IR21271SPBF vs IR2127SPBF Perbandingan

Perbandingan bersamaan detil IR21271SPBF dari Infineon dan IR2127SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR21271SPBF IR2127SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel high-side gate driver with current sensing —
Technology HVIC and latch-immune CMOS —
Maximum Floating Supply Voltage 600 V —
Output Source Current 0.25 A —
Output Sink Current 0.5 A —
Gate Drive Voltage Range 9 V to 20 V (per related IR2127 datasheet family) —
Configuration High-side, low-side capable (floating channel) —
Input Logic Compatibility 3.3 V CMOS / LSTTL —
Input Type Non-inverting —
Negative Transient Tolerance (dV/dt) Tolerant —
Bootstrap Operation Supported (floating channel) —
Integrated Current Sensing Yes —
Paket 8-SOIC 8-SOIC (SOIC-8)
Lead Finish Lead-free (PbF) —
Rentang Suhu Kerja -40C to +125C (industrial) —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (Pb-free suffix PBF)
Number of Channels 1 —
Channel Type — Single-channel, High-Side
Gate Driver Configuration — Non-Inverting Input
Jumlah Output — 1
Peak Source Current (typ) — 0.25 A
Peak Sink Current (typ) — 0.5 A
Maximum Offset Voltage (High-Side) — +600 V
Negative Transient Tolerance — dV/dt immune, negative transient tolerant
Supply Voltage (VCC) — 10 V to 20 V
Logic Input Compatibility — CMOS / LSTTL, 3.3 V to VCC
Propagation Delay (typ) — 150 ns
Rise Time (typ, 1 nF load) — 80 ns
Fall Time (typ, 1 nF load) — 40 ns
Protection Features — Overcurrent detection with DESAT-style comparator, fault output
Suhu Kerja — -40 °C to +125 °C

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