IR21531STRPBF vs IRS2153DSPBF Perbandingan

Perbandingan bersamaan detil IR21531STRPBF dari Infineon dan IRS2153DSPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR21531STRPBF IRS2153DSPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge High-side + low-side driver, half-bridge
Driver Type High-side and Low-side, self-oscillating —
Jumlah Output 2 (high-side, low-side) 2 (HO, LO)
Supply Voltage (VCC) 10 V to 20 V —
Internal VCC Clamp 15.6 V —
High-Side Offset Voltage up to 600 V —
Peak Source/Sink Current 250 mA —
Waktu naik 80 ns —
Waktu Menurun 45 ns —
Dead-Time 0.6 microseconds (typical) —
Oscillator External RC programmable —
Bootstrap Diode Integrated —
Input Logic CMOS Schmitt-trigger (RC timing) —
Suhu Kerja -40C to +125C -40 C to +125 C
Paket 8-pin SOIC (SO-8) 8-SOIC (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) —
Status RoHS Compliant (ROHS3) —
Fungsi — Half-bridge gate driver with RC input oscillator
Maximum Offset Voltage (Voffset) — 600 V
VCC Supply Voltage — 10 V to 20 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)
Technology — HVIC + latch-immune CMOS

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