IRF150P220AKMA1 vs IRFP2907PBF Perbandingan
Perbandingan bersamaan detil IRF150P220AKMA1 dari Infineon dan IRFP2907PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF150P220AKMA1 | IRFP2907PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF150P220AKMA1 | IRFP2907PBF |
| Technology | StrongIRFET | HEXFET Stripe Planar DMOS (N-Channel) |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | TO-247-3 (PG-TO247-3) | — |
| Tipe Mounting | Through Hole | — |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Drain-to-Source Voltage (V_DSS) | — | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | — | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | — | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | — | 470 W |
| Total Gate Charge (Q_g) | — | 410 nC |
| Maximum Junction Operating Temperature | — | +175 C |
| Package / Mounting Type | — | TO-247AC (Through Hole) |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| RoHS Compliance | — | Yes (Pb-free) |
| Avalanche Rated | — | Yes (repetitive avalanche rated) |
| Body Diode | — | Integral (no external anti-parallel diode required) |