IRF150P220AKMA1 vs IRFP2907PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF150P220AKMA1 tarafından Infineon ve IRFP2907PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF150P220AKMA1 | IRFP2907PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF150P220AKMA1 | IRFP2907PBF |
| Technology | StrongIRFET | HEXFET Stripe Planar DMOS (N-Channel) |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS max) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 203 A | — |
| On-Resistance (RDS(on) max) at VGS=10V | 2.7 mOhm | — |
| Gate-Source Voltage (VGS max) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (Pd) at Tc=25C | 556 W | — |
| Power Dissipation (Pd) at Ta=25C | 3.8 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C | — |
| Paket | TO-247-3 (PG-TO247-3) | — |
| Montaj Türü | Through Hole | — |
| Terminal Finish | Tin (Sn) | — |
| JESD-609 Code | e3 | — |
| RoHS Durumu | Compliant | — |
| Lead-Free | Yes | Yes |
| Drain-to-Source Voltage (V_DSS) | — | 75 V |
| Continuous Drain Current (I_D) at T_C = 25 C | — | 209 A |
| Static Drain-to-Source On-Resistance (R_DS(on)) | — | 4.5 mOhm at V_GS = 10 V |
| Power Dissipation (P_D) at T_C = 25 C | — | 470 W |
| Total Gate Charge (Q_g) | — | 410 nC |
| Maximum Junction Operating Temperature | — | +175 C |
| Package / Mounting Type | — | TO-247AC (Through Hole) |
| Pin Sayısı | — | 3 (Gate, Drain, Source) |
| RoHS Compliance | — | Yes (Pb-free) |
| Avalanche Rated | — | Yes (repetitive avalanche rated) |
| Body Diode | — | Integral (no external anti-parallel diode required) |