IRF3205STRLPBF vs IRF4905LPBF Perbandingan
Perbandingan bersamaan detil IRF3205STRLPBF dari Infineon dan IRF4905LPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF3205STRLPBF | IRF4905LPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | P-Channel |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | — |
| Paket | TO-263-3 (D2PAK) | TO-262 (I2PAK), through-hole, 3-pin |
| Tipe Mounting | Surface Mount | Through Hole |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | HEXFET (IR MOSFET) |
| Packaging | Tape & Reel (STRL) | — |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | — | -74 A |
| On-Resistance Rds(on) max @ Vgs=-10V | — | 20 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Total Power Dissipation (Ptot) @ Tc=25C | — | 200 W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| Rise Time (tr) typ | — | [DATA_NEEDED: rise time] |
| Fall Time (tf) typ | — | [DATA_NEEDED: fall time] |
| Lead-Free / RoHS | — | Yes (PbF suffix) |
| Avalanche Rated | — | Yes |