IRF3205ZSTRLPBF vs IRLB4132PBF Perbandingan

Perbandingan bersamaan detil IRF3205ZSTRLPBF dari Infineon dan IRLB4132PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF3205ZSTRLPBF IRLB4132PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET (IR MOSFET) —
Drain-Source Voltage (VDS) 55 V 30 V
Continuous Drain Current (ID) at Tc=25C 110 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 6.5 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 76 nC —
Power Dissipation (PD) at Tc=25C 170 W —
Suhu Hubung Kerja -55C to +175C —
Paket D2PAK (TO-263) —
Tipe Mounting Surface Mount Through Hole
Packaging Tape & Reel (left reel) —
Status RoHS Compliant —
Level MSL 1 —
Body Diode Avalanche-rated intrinsic —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Tipe Transistor — N-Channel MOSFET (HEXFET)
Continuous Drain Current (ID, Tc=25C) — 78 A
Maximum Power Dissipation (PD, Tc=25C) — 140 W
On-Resistance (RDS(on), VGS=10V) — 3.5 mOhm (typical)
On-Resistance (RDS(on), VGS=4.5V) — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th), typical) — 1.0 V to 2.5 V
Gate Charge (Qg, typical) — [DATA_NEEDED: total gate charge]
Maximum Junction Temperature — 175 C
Rentang Suhu Kerja — -55 C to +175 C
Paket / Case — TO-220AB (through-hole, 3 leads)
Lead-Free / RoHS — Yes (Pb-free PBF suffix)
AEC-Q101 Automotive Qualification — Not qualified (industrial/commercial)

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