IRF4905STRRPBF vs IPD50P04P413ATMA2 Perbandingan

Perbandingan bersamaan detil IRF4905STRRPBF dari Infineon dan IPD50P04P413ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF4905STRRPBF IPD50P04P413ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V -40 V
Continuous Drain Current (ID) at TC=25C -74 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM]
Gate-Source Voltage (VGS) max ±20 V ±20 V
RDS(on) max at VGS=-10V 20 mOhm —
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) 120 nC —
Power Dissipation (PD) at TC=25C 170 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket D2PAK (TO-263-3) PG-TO252-3-313 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (Advanced Process) OptiMOS-P2 (Trench)
Status RoHS Compliant Compliant
Lead-Free Yes —
Polarity / Device Type — P-Channel MOSFET
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Maximum Junction Temperature (TJ,max) — 175 °C
Rentang Suhu Kerja — -55 °C to +175 °C
Standard Pack Quantity (13" reel) — 2500 pcs
Level MSL — 1
Automotive Qualification — AEC-Q101 qualified

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