IRF5210PBF vs IRFZ44NPBF Perbandingan

Perbandingan bersamaan detil IRF5210PBF dari Infineon dan IRFZ44NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF5210PBF IRFZ44NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor P-Channel MOSFET —
Drain-Source Voltage (Vds) -100 V —
Continuous Drain Current (Id) at Tc -40 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Threshold Voltage (Vgs(th)) -2 V to -4 V (typical -2 V) —
On-Resistance Rds(on) at Vgs=-10V 60 milliohms —
Total Gate Charge (Qg) 120 nC 42 nC
Power Dissipation (Pd) at Tc 200 W —
Rentang Suhu Kerja -55 C to +175 C (junction) —
Paket TO-220AB (through-hole) TO-220AB (3-pin + tab)
Tipe Mounting Through Hole Through Hole
Technology HEXFET (Fifth Generation) HEXFET (Advanced Process)
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Tab Connection Electrically tied to Drain —
Pin Configuration Gate / Drain (tab) / Source (G-D-S, front view) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Suhu Hubung Kerja — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]
Status RoHS — Compliant

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