IRF5210PBF vs IRFZ44NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF5210PBF disebabkan oleh Infineon dan IRFZ44NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF5210PBF IRFZ44NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor P-Channel MOSFET —
Drain-Source Voltage (Vds) -100 V —
Continuous Drain Current (Id) at Tc -40 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Threshold Voltage (Vgs(th)) -2 V to -4 V (typical -2 V) —
On-Resistance Rds(on) at Vgs=-10V 60 milliohms —
Total Gate Charge (Qg) 120 nC 42 nC
Power Dissipation (Pd) at Tc 200 W —
Gambaran Suhu Operasi -55 C to +175 C (junction) —
Kemasan TO-220AB (through-hole) TO-220AB (3-pin + tab)
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET (Fifth Generation) HEXFET (Advanced Process)
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Tab Connection Electrically tied to Drain —
Pin Configuration Gate / Drain (tab) / Source (G-D-S, front view) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Suhu Hubungan Operasi — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]
Status RoHS — Compliant

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