IRF5210PBF vs IRFZ44NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF5210PBF sa pamamagitan ng Infineon at IRFZ44NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF5210PBF IRFZ44NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $0.82 —
Uri ng Transistor P-Channel MOSFET —
Drain-Source Voltage (Vds) -100 V —
Continuous Drain Current (Id) at Tc -40 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Threshold Voltage (Vgs(th)) -2 V to -4 V (typical -2 V) —
On-Resistance Rds(on) at Vgs=-10V 60 milliohms —
Total Gate Charge (Qg) 120 nC 42 nC
Power Dissipation (Pd) at Tc 200 W —
Hanay ng Temperature na Operasyon -55 C to +175 C (junction) —
Packhaging TO-220AB (through-hole) TO-220AB (3-pin + tab)
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (Fifth Generation) HEXFET (Advanced Process)
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Tab Connection Electrically tied to Drain —
Pin Configuration Gate / Drain (tab) / Source (G-D-S, front view) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Temperature ng Junction na Operasyon — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]
Tindminan RoHS — Compliant

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