IRF7105PBF vs IRF7105TRPBF Perbandingan

Perbandingan bersamaan detil IRF7105PBF dari Infineon dan IRF7105TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7105PBF IRF7105TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRF7105PBF —
FET Type N-Channel and P-Channel (Dual, Complementary) —
Technology HEXFET (Fifth Generation) HEXFET (IR MOSFET, fifth generation)
N-Channel VDS (Drain-Source Voltage) 25 V —
P-Channel VDS (Drain-Source Voltage) 25 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
Total Package Power Dissipation (PD) 2 W —
Paket / Case 8-SOIC (SO-8) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 8
Lead-Free / Halogen-Free Yes / Yes —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 —
Qualification Industrial —
Soldering Compatibility Vapor Phase, Infrared, Wave —
dv/dt Rating Dynamic (rated per datasheet) —
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
Paket — 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) — 2 W
Rentang Suhu Kerja — [DATA_NEEDED: junction temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon