IRF7105PBF vs IRF7105TRPBF 比較

詳細並排比較 IRF7105PBF 由 Infineon 與 IRF7105TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7105PBF IRF7105TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRF7105PBF —
FET Type N-Channel and P-Channel (Dual, Complementary) —
Technology HEXFET (Fifth Generation) HEXFET (IR MOSFET, fifth generation)
N-Channel VDS (Drain-Source Voltage) 25 V —
P-Channel VDS (Drain-Source Voltage) 25 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
Total Package Power Dissipation (PD) 2 W —
封裝 / 外殼 8-SOIC (SO-8) —
安裝類型 Surface Mount Surface Mount
腳位數 8 8
Lead-Free / Halogen-Free Yes / Yes —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 —
Qualification Industrial —
Soldering Compatibility Vapor Phase, Infrared, Wave —
dv/dt Rating Dynamic (rated per datasheet) —
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
封裝 — 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) — 2 W
工作溫度範圍 — [DATA_NEEDED: junction temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant

資料表與資源

瀏覽所有產品 建立 BOM 索取報價