IRF7105PBF vs IRF7105TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7105PBF disebabkan oleh Infineon dan IRF7105TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7105PBF IRF7105TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRF7105PBF —
FET Type N-Channel and P-Channel (Dual, Complementary) —
Technology HEXFET (Fifth Generation) HEXFET (IR MOSFET, fifth generation)
N-Channel VDS (Drain-Source Voltage) 25 V —
P-Channel VDS (Drain-Source Voltage) 25 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
Total Package Power Dissipation (PD) 2 W —
Kemasan / Case 8-SOIC (SO-8) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 8
Lead-Free / Halogen-Free Yes / Yes —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 —
Qualification Industrial —
Soldering Compatibility Vapor Phase, Infrared, Wave —
dv/dt Rating Dynamic (rated per datasheet) —
Part Series — IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration — N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) — 25 V
Continuous Drain Current - N-channel (Id, N-ch) — 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) — 2.3 A
Rds(on) Maximum — 100 mOhm
Kemasan — 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) — 2 W
Gambaran Suhu Operasi — [DATA_NEEDED: junction temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: typical Vgs(th)]
Packaging Form — Tape & Reel (TR)
Lead-Free / RoHS Status — Pb-free (PBF suffix), RoHS compliant

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