IRF7342TRPBF vs IRF7907TRPBF Perbandingan

Perbandingan bersamaan detil IRF7342TRPBF dari Infineon dan IRF7907TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7342TRPBF IRF7907TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET (Infineon hexfet-style trench)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
Rentang Suhu Kerja -55 C to +150 C (Tj) -55 C to +150 C
Paket 8-SOIC (SO-8), surface mount 8-SOIC (SO-8)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape and Reel (TR) Tape & Reel (TR)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) Max — 9.1 A per channel at 25 C
Pulsed Drain Current (IDM) Max — 11 A
On-Resistance (RDS(on)) Max — 11.8 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 1.35 V (typ)
Total Power Dissipation (PD) Max — 2 W
Lead-Free Status — Yes (PBF suffix)
Status RoHS — Compliant
Channel Polarity — N-Channel (both)

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