IRF7342TRPBF vs IRF7907TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7342TRPBF sa pamamagitan ng Infineon at IRF7907TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7342TRPBF IRF7907TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET (Infineon hexfet-style trench)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) Dual N-Channel MOSFET Array
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
Hanay ng Temperature na Operasyon -55 C to +150 C (Tj) -55 C to +150 C
Packhaging 8-SOIC (SO-8), surface mount 8-SOIC (SO-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape and Reel (TR) Tape & Reel (TR)
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) Max — 9.1 A per channel at 25 C
Pulsed Drain Current (IDM) Max — 11 A
On-Resistance (RDS(on)) Max — 11.8 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 1.35 V (typ)
Total Power Dissipation (PD) Max — 2 W
Lead-Free Status — Yes (PBF suffix)
Tindminan RoHS — Compliant
Channel Polarity — N-Channel (both)

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