IRF7815TRPBF vs IRFR3411TRPBF Perbandingan
Perbandingan bersamaan detil IRF7815TRPBF dari Infineon dan IRFR3411TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7815TRPBF | IRFR3411TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | MOSFET (Metal Oxide) |
| Technology | IR MOSFET (HEXFET) | HEXFET Power MOSFET (IR) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Rds(on) Max at Vgs=10V | 43 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) Typ | 3.0 V | — |
| Total Gate Charge (Qg) Typ | 25 nC | — |
| Maximum Power Dissipation (Ta=25C) | 2.5 W | — |
| Rentang Suhu Kerja | -55C to +150C (Tj) | -55 C to +175 C |
| Paket | SO-8 (8-SO) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | — |
| Status RoHS | Compliant (Pb-free) | — |
| Lead-Free | Yes | — |
| Configuration | Single | — |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Polarity | — | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 100 V |
| RDS(on) max @ VGS=10V | — | 44 mOhm |
| Continuous Drain Current (Id) @ Tc | — | 32 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | — | 130 W |
| Gate Charge (Qg) | — | 48 nC |
| Operating Mode | — | Enhancement |
| Maximum Junction Temperature | — | 175 C |
| Jumlah Pin | — | 3 |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Lead-Free / RoHS | — | Yes (Lead-free, PBF suffix) |