IRF7832TRPBF vs IRF7309TRPBF Perbandingan
Perbandingan bersamaan detil IRF7832TRPBF dari Infineon dan IRF7309TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7832TRPBF | IRF7309TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7832TRPBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | IR HEXFET Generation V |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | — |
| Total Gate Charge (Qg) typical | 34 nC | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Rentang Suhu Kerja | -55 C to +150 C (TJ) | -55C to +150C (TJ) |
| Paket | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | MSL-1 (unlimited floor life per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Configuration | — | Dual N-Channel + P-Channel (Complementary) |
| Polarity | — | N+P |
| Continuous Drain Current (N-channel, TA=25C) | — | 4 A |
| Continuous Drain Current (P-channel, TA=25C) | — | 3 A |
| On-Resistance (N-channel, max) | — | 50 mOhm |
| On-Resistance (P-channel, max) | — | [DATA_NEEDED: RDS(on) P-channel value] |
| Power Dissipation (TA=25C) | — | 1.4 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Lead-Free Status | — | Yes (TRPBF suffix = Pb-free) |
| Packaging | — | Tape & Reel |