IRF7832TRPBF vs IRF7309TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7832TRPBF sa pamamagitan ng Infineon at IRF7309TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7832TRPBF IRF7309TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7832TRPBF —
FET Type N-Channel —
Technology HEXFET (trench MOSFET) IR HEXFET Generation V
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V —
Total Gate Charge (Qg) typical 34 nC —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55 C to +150 C (TJ) -55C to +150C (TJ)
Packhaging 8-SO (SOIC-8) 8-SO (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) MSL-1 (unlimited floor life per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Configuration — Dual N-Channel + P-Channel (Complementary)
Polarity — N+P
Continuous Drain Current (N-channel, TA=25C) — 4 A
Continuous Drain Current (P-channel, TA=25C) — 3 A
On-Resistance (N-channel, max) — 50 mOhm
On-Resistance (P-channel, max) — [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) — 1.4 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Lead-Free Status — Yes (TRPBF suffix = Pb-free)
Packaging — Tape & Reel

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